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2009 EUVL Symposium (Talk) NEW
Prague, October 2009.
Progress in Actinic Mask Imaging:The closest look at lines, defects, and phase roughness
2009's highlights from the SEMATECH Berkeley Actinic Inspection Tool (AIT): Alignment, Line Profiles (NILS, CD, LWR), Programmed Defects, Native Pattern Defects, Native Blank Defects, OPC Calibration, Wavelength Sensitivity, Calibrating Modeling, and Multilayer Phase Roughness.

2009 EUVL Symposium (Talk) NEW
Prague, October 2009.
Actinic imaging of known native defects on a full-field mask.
A Comparison of Different EUV Mask Inspection Techniques looking at real-world defects: EUV actinic inspection, DUV mask and wafer inspection, SEM mask and wafer inspections.

2009 International EUVL Workshop (Talk)
Honolulu, Hawaii, USA, July 2009.
Wavelength-Specific Reflections: A Decade of EUV Mask Inspection Research
A look back at all of the research projects in actininc (EUV-wavelength) mask inspection research since 1995: firsts, early successes, what has been learned, and a glimpse of the future.

2009 International EUVL Workshop (Talk)
Honolulu, Hawaii, USA, July 2009.
Zoneplates for EUV Microscopy
An overview of the theory and use of Fresnel zoneplates, applied to EUV reticle imaging, with recent examples from the Actinic Inspection Tool (AIT).

EIPBN 2009 (Talk) (Poster)
Marco Island, Florida, USA, May 2009.
EUV pattern defect detection sensitivity based on aerial image linewidth measurements
Investigating the line-width roughness measurement limits in EUV-wavelength mask inspection, performed with the SEMATECH Berkeley Actinic Inspection Tool (AIT), an EUV-wavelength mask inspection microscope.

Marco Island, Florida, USA, May 2009.
Using aberration test patterns to optimize the performance of EUV aerial imaging microscopes
Using through-focus imaging of specially-designed mask patterns, we deduce the field-dependent aberrations of the SEMATECH Berkeley Actinic Inspection Tool (AIT) and optimize its alignment.

SPIE Advanced Lithography 2009
San Jose, California, USA, February 2009.
Collecting EUV mask images through focus by wavelength tuning
A new method a through-focus data collection that improves image quality and data reproducability on the SEMATECH Berkeley Actinic Inspection Tool (AIT) an EUV-wavelength mask inspection microscope.

SPIE Advanced Lithography 2009
San Jose, California, USA, February 2009.
Improving the performance of the Actinic Inspection Tool with an optimized alignment procedure
In 2008 we improved the AIT's imaging quality in many ways. The most significant impovement has come from perfecting the alignment to reduce the wavefront aberration magnitude toward zero.

SPIE Photomask BACUS 2008
Monterey, California, USA, October 2008.
Benchmarking EUV Mask Inspection Beyond 0.25 NA
Taking a closer look at the linewidth and contrast measurement capabilities of the SEMATECH Berkeley Actinic Inspection Tool (AIT) an EUV mask inspection microscope.

2008 International Symposium on Extreme Ultraviolet Lithography
Lake Tahoe, California, USA, September 2008.
Aerial Image Linewidth Measurement Capabilities of the Actinic Inspection Tool
With improved resolution (up to 0.35-NA 4x equivalent) and reduced aberration magnitudes, we investigate linewidth, CD, and contrast measurement repeatability.

2008 International Symposium on Extreme Ultraviolet Lithography
Lake Tahoe, California, USA, September 2008.
Achieving Diffraction-limited EUV Aerial Image Microscopy
Proper alignment reduces the aberration magnitudes and improves the quality of every inspection metric. We model the AIT imaging system and use through-focus contact field images to quantify and reduce the aberrations.

2008 International Workshop on EUV Lithography
Wailea, Maui, Hawaii, USA, June 2008.
EUV mask inspection: a bright idea?
EUV imaging is sensitive to tiny defects, including defects that UV inspection tools cannot see. Current non-EUV mask inspection tools are not sensitive enough for 40-nm half-pitch features or smaller. And we know that defects smaller than 29 nm can affect CD. EUV defects are such a serious issue, and no commercial inspection tools are in the pipeline, so why is so little research being funded in this area? I show that the total EUV light energy required to inspect a mask is actually very reasonable.

2008 International Workshop on EUV Lithography
Wailea, Maui, Hawaii, USA, June 2008.
A Survey of EUV At-Wavelength Optical Testing
In an effort to produce the highest quality optical imaging systems ever made, a large number of different EUV interferometry techniques have been applied in the creation of diffraction-limited EUV optics. These methods can reach ultra-high accuracy levels. I give an overview of many of the different EUV testing methods that have been used, and I review 17 things you need to know about EUV interferometry.

EIPBN 2008
Portland, Oregon, USA, May, 2008.
Actinic EUV Mask Inspection beyond 0.25 NA: Upgrading the SEMATECH Berkeley Actinic Inspection Tool
The SEMATECH Berkeley Actinic Inspection Tool (AIT) is a zoneplate microscope that provides high quality aerial image measurements. We report performance testing following a number of improvements. The AIT zoneplates now include NA values up to 0.35 (4x) providing 75% contrast for 100-nm lines. We have improved the illumination uniformity with a scanning beamline mirror, and we characterize the coherence by observing the contrast in dense lines in large, through focus series.

SPIE Advanced Lithography 2008
San Jose, California, USA, February, 2008.
EUV-mask reflectivity measurements with micron-scale spatial resolution
In 'scanning mode' the AIT can be used as a high-spatial resolution reflectometer, probing mask properties on the 1-10 μm scale. We investigate reflectivity changes from inspection damage, and the importance of bright-field and dark-field inspection modes in understanding mask properties.

SPIE Advanced Lithography 2008
San Jose, California, USA, February, 2008.
Evaluating EUV-mask pattern imaging with two EUV microscopes
We investigate the performance of two synchrotron-based actinic (EUV-wavelength) mask inspection tools. The SEMATECH Berkeley AIT, and the University of Hyogo EUVM are the two highest performing actinic inspection tools dedicated to EUV mask research.

SPIE Photomask BACUS 2007
Monterey, California, USA, September, 2007.
Performance of actinic EUVL mask imaging using a zoneplate microscope
We describe the imaging performance of the Actinic Inspection Tool (AIT) zoneplate microscope, in terms of the aberration magnitude, contrast transfer function (CTF), coherence, illumination uniformity, flare, and other performance metrics.

SPIE Advanced Lithography 2007
San Jose, California, USA, February, 2007.
Actinic and Non-Actinic Inspection of Defect Repair Sites.
A mask was prepared to study an e-beam-activated chemically induced etching process designed for open-field defect repair. We map micron-scale changes in the surface EUV reflectivity and scattering signals, and correlate with M1350 inspection (488-nm wavelength), SEM, and AFM.

EUVL Symposium 2006
Barcelona, Spain, October 18, 2006.
Comparison of actinic and non-actinic inspection of programmed defect masks
An overview of Actinic Mask Inspection activities, including scanning, imaging, and comparisons with non-EUV techniques. We studied defect printability, bump and pit type substrate defects, and investigated inspection damage that can be caused by other mask inspection tools.

EIPBN 2006
Baltimore, Maryland, June 2nd, 2006.
Actinic Inspection of EUV Programmed Multilayer Defects and Cross-Comparison Measurements
A comparison among four tools inspecting a single programmed-defect mask with buried substrate bumps. Two EUV tools and two Lasertec non-EUV tools were used.

SPIE Optics & Photonics 2005
San Diego, California, August 3rd, 2005.
Ultra-high-accuracy optical testing: creating diffraction-limited short-wavelength optical systems
Overview of ultra-high-accuracy EUV optics testing programs at LBNL. Presentation made to Optics for EUV, X-Ray, and Gamma-Ray Astronomy II, Performance Prediction and Testing, Proc. SPIE 5900.

Center for X-Ray Optics, LBNL Review
Berkeley, CA, July 2005.

EIPBN 2005
Orlando, Florida, June 1, 2005.
EUV Focus Sensor Design Optimization (Poster)
Expanded design optimization of an EUV Focus Sensor and Aerial Image Monitor tool

SPIE Microlithography 2005 [1.5 MB]
San Jose, California, March 2, 2005.
EUV Focus Sensor: design and modeling
Design optimization of an EUV Focus Sensor and Aerial Image Monitor tool.

EUVL Symposium 2004 [2.4 MB]
Miyazaki, November 3, 2004.
At-wavelength Alignment and Testing of the 0.3-NA MET Optic: reaching diffraction-limited imaging, and beyond
Description of the completed alignment of the Micro-Exposure Tool (MET) using EUV interferometry. Important lessons learned, and system stability measurements are discussed.

MNC 2004 [2.8 MB]
Osaka, Japan, October 27, 2004.
EUV system optimization and advanced lithography research at Lawrence Berkeley National Laboratory
EUV alignment and operation of the Micro-Exposure Tool (MET) at LBNL. Over 100 resists have been tested. Details from the characterization of two important EUV photoresists are presented.

EIPBN 2004
San Diego, California, June, 3, 2004.
At-wavelength Alignment and Testing of the 0.3 NA MET Optic: measurements, alignment, cross-comparisons
Summary of the completion of EUV interferometric testing and alignment of the MET optic. Inter-comparisons are made with visible-light, lensless phase-shifting diffraction interferometry measurements and the two EUV techniques.

SPIE Microlithography 2004 [1.4 MB]
Santa Clara, California, February, 24, 2004.
EUV Interferometric Testing and Alignment of the MET Optic: measurements, alignment, cross-comparisons
Summary of the completion of EUV interferometric testing and alignment of the MET optic. Inter-comparisons are made with visible-light, lensless phase-shifting diffraction interferometry measurements and the two EUV techniques.

SEMATECH EUVL Symposium 2003 [2 MB]
Antwerp, Belgium, October, 2003.
At-wavelength interferometry of the 0.3 NA MET Optic
Summary of interferometry on the MET Optic: visible and EUV comparisons, null testing, field measurement, performed in preparation for imaging experiments.

LBNL's Material Sciences Division Review [1.6 MB]
Half Moon Bay, California, August, 2003.
Overview of EUV Interferometry work conducted at LBNL during the past 3 years.

EIPBN 2003 [1.1 MB]
Tampa, Florida, May, 2003.
At-wavelength interferometry of the 0.3 NA MET Optic
Preparations for interferometry of the Mirco-Exposure Tool (MET) optic.

SPIE Microlithography 2003 [950 kB]
Santa Clara, California, February, 2003.
EUV interferometry of the 0.3 NA MET Optic
Preparations for interferometry of the Mirco-Exposure Tool (MET) optic.

SEMATECH EUVL Symposium 2002 [1.2 MB]
Dallas, Texas, October, 2002.
VNL Research in Interferometry for EUV Optics
Summary of interferometry on the ETS Set-2 Optic: visible and EUV comparisons. Preparations for interferometry of the Mirco-Exposure Tool (MET) optic, including visible and EUV testing.

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