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SPIE Advanced Lithography 2008 NEW
San Jose, California, USA, February, 2008.
EUV-mask reflectivity measurements with micron-scale spatial resolution. In 'scanning mode' the AIT can be used as a high-spatial resolution reflectometer, probing mask properties on the 1-10 μm scale. We investigate reflectivity changes from inspection damage, and the importance of bright-field and dark-field inspection modes in understanding mask properties.

SPIE Advanced Lithography 2008 NEW
San Jose, California, USA, February, 2008.
Evaluating EUV-mask pattern imaging with two EUV microscopes. We investigate the performance of two synchrotron-based actinic (EUV-wavelength) mask inspection tools. The SEMATECH Berkeley AIT, and the University of Hyogo EUVM are the two highest performing actinic inspection tools dedicated to EUV mask research.

EUVL Symposium 2007
Sapporo, Japan, October, 2007.
Performance and status of actinic EUVL mask imaging using a zoneplate microscope. We describe the imaging performance and current status of the Actinic Inspection Tool (AIT) zoneplate microscope, including recent highlight images.

SPIE Photomask BACUS 2007
Monterey, California, USA, September, 2007.
Performance of actinic EUVL mask imaging using a zoneplate microscope. We describe the imaging performance of the Actinic Inspection Tool (AIT) zoneplate microscope, in terms of the aberration magnitude, contrast transfer function (CTF), coherence, illumination uniformity, flare, and other performance metrics.

SPIE Advanced Lithography 2007
San Jose, California, USA, February, 2007.
Actinic and Non-Actinic Inspection of Defect Repair Sites. A mask was prepared to study an e-beam-activated chemically induced etching process designed for open-field defect repair. We map micron-scale changes in the surface EUV reflectivity and scattering signals, and correlate with M1350 inspection (488-nm wavelength), SEM, and AFM.

EUVL Symposium 2006
Barcelona, Spain, October 18, 2006.
Comparison of actinic and non-actinic inspection of programmed defect masks. An overview of Actinic Mask Inspection activities, including scanning, imaging, and comparisons with non-EUV techniques. We studied defect printability, bump and pit type substrate defects, and investigated inspection damage that can be caused by other mask inspection tools.

EIPBN 2006
Baltimore, Maryland, June 2nd, 2006.
Actinic Inspection of EUV Programmed Multilayer Defects and Cross-Comparison Measurements. A comparison among four tools inspecting a single programmed-defect mask with buried substrate bumps. Two EUV tools and two Lasertec non-EUV tools were used.

SPIE Optics & Photonics 2005
San Diego, California, August 3rd, 2005.
Ultra-high-accuracy optical testing: creating diffraction-limited short-wavelength optical systems Overview of ultra-high-accuracy EUV optics testing programs at LBNL. Presentation made to Optics for EUV, X-Ray, and Gamma-Ray Astronomy II, Performance Prediction and Testing, Proc. SPIE 5900.

Center for X-Ray Optics, LBNL Review
Berkeley, CA, July 2005.

EIPBN 2005
Orlando, Florida, June 1, 2005.
EUV Focus Sensor Design Optimization (Poster) Expanded design optimization of an EUV Focus Sensor and Aerial Image Monitor tool.

SPIE Microlithography 2005 [1.5 MB]
San Jose, California, March 2, 2005.
EUV Focus Sensor: design and modeling Design optimization of an EUV Focus Sensor and Aerial Image Monitor tool.

EUVL Symposium 2004 [2.4 MB]
Miyazaki, November 3, 2004.
At-wavelength Alignment and Testing of the 0.3-NA MET Optic: reaching diffraction-limited imaging, and beyond. Description of the completed alignment of the Micro-Exposure Tool (MET) using EUV interferometry. Important lessons learned, and system stability measurements are discussed.

MNC 2004 [2.8 MB]
Osaka, Japan, October 27, 2004.
EUV system optimization and advanced lithography research at Lawrence Berkeley National Laboratory EUV alignment and operation of the Micro-Exposure Tool (MET) at LBNL. Over 100 resists have been tested. Details from the characterization of two important EUV photoresists are presented.

EIPBN 2004
San Diego, California, June, 3, 2004.
At-wavelength Alignment and Testing of the 0.3 NA MET Optic: measurements, alignment, cross-comparisons. Summary of the completion of EUV interferometric testing and alignment of the MET optic. Inter-comparisons are made with visible-light, lensless phase-shifting diffraction interferometry measurements and the two EUV techniques.

SPIE Microlithography 2004 [1.4 MB]
Santa Clara, California, February, 24, 2004.
EUV Interferometric Testing and Alignment of the MET Optic: measurements, alignment, cross-comparisons. Summary of the completion of EUV interferometric testing and alignment of the MET optic. Inter-comparisons are made with visible-light, lensless phase-shifting diffraction interferometry measurements and the two EUV techniques.

SEMATECH EUVL Symposium 2003 [2 MB]
Antwerp, Belgium, October, 2003.
At-wavelength interferometry of the 0.3 NA MET Optic. Summary of interferometry on the MET Optic: visible and EUV comparisons, null testing, field measurement, performed in preparation for imaging experiments.

LBNL's Material Sciences Division Review [1.6 MB]
Half Moon Bay, California, August, 2003.
Overview of EUV Interferometry work conducted at LBNL during the past 3 years.

EIPBN 2003 [1.1 MB]
Tampa, Florida, May, 2003.
At-wavelength interferometry of the 0.3 NA MET Optic. Preparations for interferometry of the Mirco-Exposure Tool (MET) optic.

SPIE Microlithography 2003 [950 kB]
Santa Clara, California, February, 2003.
EUV interferometry of the 0.3 NA MET Optic. Preparations for interferometry of the Mirco-Exposure Tool (MET) optic.

SEMATECH EUVL Symposium 2002 [1.2 MB]
Dallas, Texas, October, 2002.
VNL Research in Interferometry for EUV Optics. Summary of interferometry on the ETS Set-2 Optic: visible and EUV comparisons. Preparations for interferometry of the Mirco-Exposure Tool (MET) optic, including visible and EUV testing.