LBNL Materials Sciences Division Retreat 2004

EUV Lithography Research and Development
Center for X-Ray Optics, Lawrence Berkeley National Laboratory

This poster was prepared for LBNL's Materials Sciences Division Review, Napa, August 25-27, 2004.
Click on the Photo for an overview of the poster.

Patrick Naulleau and Ken Goldberg, August 25, 2004

	Title and Test Image		Current Resarch Topics Multilayer Mirrors, EUV Optical Systems, Lithographic Testing, Optical Properties
	EUV Reflectometry Reflectometer measures multilayer coatings, calibrates photodiodes, and serves as a worldwide reference standard.		EUV Interferometry, Alignment, and Optics Testing EUV Interferometers use cohernet EUV light to measure atomic-scale aberrations.
	EUV Lithographic Imaging Unique EUV lithographic printing capabilities with resolutions down to 12 nm.		At-Wavelength Inspection of EUV Mask Blanks Mask inspection station operates at EUV wavelengths, identifying defects with high sensitivity.